Electron-stimulated desorption of surface hydrogen on a Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference15 articles.
1. Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
2. High Quality Silicon Epitaxy at 500°C using Silane Gas-Source Molecular Beam Technique
3. Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films
4. Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
5. Adsorption of atomic hydrogen on clean cleaved silicon (111)
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1. Non-adiabatic and ultrafast dynamics of hydrogen adsorbed on silicon;Current Opinion in Solid State and Materials Science;2004-10
2. Kinetics of Si growth by an electron-beam-irradiation technique using a Si[sub 2]H[sub 6] source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11
3. Substrate temperature dependence of Si growth by an electron beam irradiation technique using a Si2H6 gas source;Applied Surface Science;1998-09
4. Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum;MRS Proceedings;1997
5. Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy;Journal of Applied Physics;1995-08-15
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