Growth control of InAs thin layers on GaAs substrates with several orientations-Reference-Cited by-同舟云学术

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Growth control of InAs thin layers on GaAs substrates with several orientations

Published:1994-01 Issue:1-4 Volume:75 Page:279-284
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Jeong-Sik,Shima Takayuki,Kudo Kazuhiro,Tanaka Kuniaki,Niki Shigeru,Yamada Akimasa,Makita Yunosuke

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Nanofeatures on GaAs (111)B via photolithography

2. GaAs tetrahedral quantum dots grown by selective area MOCVD

3. Strain effects in InGaAs/HaAs superlattices

4. Electronic band structure of the (GaAs)1/(InAs)1(111) superlattice

5. Fabrication and characterization of MBE grown InAs/GaAs strained-layer superlattices on variously oriented substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-02

2. Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison;Physica E: Low-dimensional Systems and Nanostructures;2009-10

3. Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy;Journal of Crystal Growth;1999-09

4. Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates;Journal of Applied Physics;1996-12

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