Discontinuous Galerkin deterministic solvers for a Boltzmann–Poisson model of hot electron transport by averaged empirical pseudopotential band structures-Reference-Cited by-同舟云学术

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Discontinuous Galerkin deterministic solvers for a Boltzmann–Poisson model of hot electron transport by averaged empirical pseudopotential band structures

Published:2017-07 Issue: Volume:321 Page:209-234
ISSN:0045-7825
Container-title:Computer Methods in Applied Mechanics and Engineering
language:en
Short-container-title:Computer Methods in Applied Mechanics and Engineering

Author:

Morales-Escalante José,Gamba Irene M.,Cheng Yingda,Majorana Armando,Shu Chi-Wang,Chelikowsky James

Funder

NSF

DOE

U.S. DOE

Publisher

Elsevier BV

Subject

Computer Science Applications,General Physics and Astronomy,Mechanical Engineering,Mechanics of Materials,Computational Mechanics

Reference26 articles.

1. Semiconductor Equations;Markowich,1990

2. The Monte Carlo Method for Semiconductor Device Simulation;Jacoboni,1989

3. Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices;Fatemi;J. Comput. Phys.,1993

4. A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices;Majorana;J. Comput. Phys.,2001

5. A weno-solver for the 1d non-stationary Boltzmann–Poisson system for semiconductor devices;Carrillo;J. Comput. Electron.,2002

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1. Micro-macro decomposition based asymptotic-preserving numerical schemes and numerical moments conservation for collisional nonlinear kinetic equations;Journal of Computational Physics;2019-04

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