Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In,Ga)Se2-Reference-Cited by-同舟云学术

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Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In,Ga)Se2

Published:2022-05 Issue: Volume:237 Page:161-172
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Buldu Dilara G.,de Wild Jessica,Kohl Thierry,Birant Gizem,Brammertz Guy,Meuris Marc,Poortmans Jef,Vermang Bart^ORCID

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference44 articles.

1. Decoupling of optoelectronic properties from morphological changes in sodium treated kesterite thin film solar cells;Andres;Sol. Energy,2018

2. Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu(In, Ga)Se2 (CIGS) solar cells;Birant;Sol. Energy,2020

3. Dielectric-based rear surface passivation approaches for Cu(In, Ga)Se 2 solar cells-A review;Birant;Appl. Sci.,2019

4. Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx;Birant;EPJ Photovoltaics,2020

5. A Novel Strategy for the Application of an Oxide Layer to the Front Interface of Cu(In, Ga)Se2Thin Film Solar Cells: Al2O3/HfO2Multi-Stack Design with Contact Openings;Buldu;IEEE J. Photovoltaics,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric Front Passivation for Cu(In,Ga)Se ₂ Solar Cells: Status and Prospect;Advanced Energy and Sustainability Research;2022-11-23

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