Photoluminescence study of the defect-induced recombination in Cu(In,Ga)Se2 solar cell

Author:

Yang J.,Chen D.S.,Xu F.,Ma Z.Q.

Funder

National Natural Science Foundation

Shanghai Leading Basic Research Project

R&D Foundation of SHU-SOENs PV Joint Lab

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference36 articles.

1. The optical parameters and photoconductivity of CdxIn1Se9−x chalcogenide thin films;Abdel-Aal;Physica B,2007

2. Photoluminescence study of poly-crystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition;Abken;J. Appl. Phys.,2009

3. An analysis of the effect of illumination to the reverse and forward bias current transport mechanisms in an efficient n-ZnO/n-CdS/p-Cu(In,Ga)Se2 solar cell;Bayhan;Sol. Energy,2013

4. Photoluminescence measurements in the phase transition region for CdS thin films;Calderon;Vac. Sci. Technol. A,1996

5. Chen D.S., Yang J., Xu F., Du H.W., Shi J.W., Yu Z.S., Zhang Y.H., Ma Z.Q., (2012). Jsc Improvement of CdS/Cu(In,Ga)Se2 Solar Cells After Rapid Thermal Annealing. In: Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, 2012, pp. 000873–000878.

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