Influence of WSe2 buffer layer at back electrode on performance of Cu2ZnSn(S,Se)4 solar cells-Reference-Cited by-同舟云学术

Influence of WSe2 buffer layer at back electrode on performance of Cu2ZnSn(S,Se)4 solar cells

Published:2020-03 Issue: Volume:199 Page:128-135
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Zhang Xiaohui,Yao Bin^ORCID,Li Yongfeng^ORCID,Ding Zhanhui,Zhao Haifeng,Zhang Ligong,Zhang Zhenzhong

Funder

National Natural Science Foundation of China

Science and Technology Development Project of Jilin Province

Natural Science Foundation of Jilin Province

High Performance Computing Center of Jilin University, China

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference25 articles.

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3. Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics;Chet Steinhagen;J. Am. Chem. Soc.,2009

4. Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface;Fangyang Liu;Appl. Phys. Lett.,2014

5. Determination of back contact barrier height in Cu(In, Ga)(Se, S)2 and CdTe solar cells;Koishiyev,2008

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