Numerical exploration for structure design and free-energy loss analysis of the high-efficiency polysilicon passivated-contact p-type silicon solar cell-Reference-Cited by-同舟云学术

Numerical exploration for structure design and free-energy loss analysis of the high-efficiency polysilicon passivated-contact p-type silicon solar cell

Published:2019-01 Issue: Volume:178 Page:249-256
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Zeng Yuheng,Yang Qing,Wan Yimao,Yang Zhenhai,Liao Mingdun,Huang Yuqing,Zhang Zhi,Guo Xueqi,Wang Zhixue,Gao Pingqi^ORCID,Wu Chung-Han,Yan Baojie,Ye Jichun

Funder

National Key Research and Development of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Provincial

Major Project and Key S&T Program of Ningbo

Natural Science Foundation of Ningbo City

International S&T Cooperation Program of Ningbo

Key S&T Research Program of Ningbo

Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference44 articles.

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3. Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon;Couderc;J. Appl. Phys.,2014

4. A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%;Feldmann,2013

5. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics;Feldmann;Sol. Energy Mater. Sol. Cells,2014

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