Influence of defect states and fixed charges located at the a-Si:H/c-Si interface on the performance of HIT solar cells-Reference-Cited by-同舟云学术

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Influence of defect states and fixed charges located at the a-Si:H/c-Si interface on the performance of HIT solar cells

Published:2017-01 Issue: Volume:141 Page:222-227
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Oppong-Antwi Louis,Huang Shihua,Li Qiannan,Chi Dan,Meng Xiuqing,He Lv

Funder

Zhejiang Provincial Natural Science Foundation of China

the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University

the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences

Zhejiang Provincial Science and Technology Key Innovation Team

Zhejiang Provincial Key Laboratory

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference10 articles.

1. Modeling solar cells: a method for improving their efficiency;Arturo;Mater. Sci. Eng. B,2012

2. Simulation of heterojunction solar cells with AMPS-1D;Como;Sol. Energy Mater. Sol. Cell,2010

3. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell;Dao;Sol. Energy,2010

4. Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve ∼27% efficiency;Dwivedi;Sol. Energy,2013

5. Simulation of a high-efficiency silicon-based heterojunction solar cell;Liu;J. Semiconduct.,2015

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