Influence of process parameters on the properties of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films

Author:

Nicolaou Christiana,Zacharia Anna,Itskos Grigorios,Giapintzakis John

Funder

University of Cyprus

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference51 articles.

1. Growth of Cu (In, Ga) Se2 thin films by coevaporation using alkaline precursors;Ård;Thin Solid Films,2000

2. Pulsed laser ablation and deposition of thin films;Ashfold;Chem. Soc. Rev.,2004

3. Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu (In1−xGax)Se2 thin films versus optical band gap;Bauer;Thin Solid Films,2005

4. Pulsed laser deposition in Twente: from research tool towards industrial deposition;Blank;J. Phys. D Appl. Phys.,2013

5. Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition;Cazzaniga;Sol. Energy Mater. Sol. Cells,2017

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