Strain engineering of magnetic state in vacancy-doped phosphorene-Reference-Cited by-同舟云学术

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Strain engineering of magnetic state in vacancy-doped phosphorene

Published:2016-09 Issue:40 Volume:380 Page:3270-3277
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Ren Jie,Zhang Chunxiao^ORCID,Li Jin,Guo Zhixin,Xiao Huaping,Zhong Jianxin

Funder

National Natural Science Foundation of China

Program for Changjiang Scholars and Innovative Research Team in University

Special Funds for Theoretical Physics of the National Natural Science Foundation of China

Specialized Research Fund for the Doctoral Program of Higher Education of China

Scientific Research Fund of Hunan Provincial Education Department

Natural Science Foundation of Hunan Province, China

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference43 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Local electronic signatures of impurity states in graphene;Wehling;Phys. Rev. B,2007

3. Quantum hall states near the charge-neutral Dirac point in graphene;Jiang;Phys. Rev. Lett.,2007

4. Emergence of magnetism in graphene materials and nanostructures;Yazyev;Rep. Prog. Phys.,2010

5. Electronic spin transport and spin precession in single graphene layers at room temperature;Tombros;Nature,2007

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