Effects of strain on the characteristics of InGaN–GaN multiple quantum-dot blue light emitting diodes
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference23 articles.
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2. Light absorption in semiconducting quantum dot clusters with fixed surface areas in an external tilted magnetic field;AIP Advances;2020-08-01
3. The effects of close packing and electric fields on the optical properties of three-dimensionally stacked quantum dots;Journal of Computational Electronics;2019-11-16
4. The physicochemical properties and capacitive functionality of pyrrolic- and pyridinic-nitrogen, and boron-doped reduced graphene oxide;Electrochimica Acta;2017-12
5. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-02
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