Hysteresis in the quantized current characteristics of single-electron-transport device
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference22 articles.
1. High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves
2. Quantized charge pumping through a quantum dot by surface acoustic waves
3. Quantized acoustoelectric current in an InGaAs quantum well
4. Single-electron acoustic charge transport on shallow-etched channels in a perpendicular magnetic field
5. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale
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1. Measurement and analysis of the height of potential barrier and depth of moving potential dot in the quantum point contact;Physics Letters A;2020-07
2. Measurement and analysis of telegraph noise in the acoustoelectric current of shallow-etched quantum point device;Indian Journal of Physics;2019-10-26
3. Width dependence of the 0.5 × (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling;Scientific Reports;2019-08-21
4. The Gate Hysteresis in Single Electron Transport Driven by Surface Acoustic Wave (SAW/SET) Devices;Journal of Low Temperature Physics;2017-08-01
5. Enhancing magnetoelectric effect in multiferroic composite bilayers via flexoelectricity;Journal of Applied Physics;2016-04-07
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