Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires-Reference-Cited by-同舟云学术

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Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

Published:2010-07 Issue:31-32 Volume:374 Page:3247-3253
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Shu Haibo,Chen Xiaoshuang,Ding Zongling,Dong Ruibin,Lu Wei

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference32 articles.

1. Nanowire electronic and optoelectronic devices

2. Nanowire photonics

3. Nanometer-scale thermoelectric materials;Heremans,2007

4. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

5. Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preadsorption of gallium on GaAs(111)B surface during the self-catalyst growth of GaAs nanowires;Physica B: Condensed Matter;2014-11

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