Rashba spin–orbit effect on dwell time of electrons tunneling through semiconductor barrier
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference37 articles.
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1. Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-layered semiconductor heterostructure;Superlattices and Microstructures;2020-07
2. Dwell time, Hartman effect and transport properties in a ferromagnetic phosphorene monolayer;Journal of Physics: Condensed Matter;2018-02-05
3. Spin-dependent delay time in ferromagnet/insulator/ferromagnet heterostructures;Journal of Applied Physics;2014-07-07
4. Influence of Rashba spin-orbit interaction on the transmission and the dwell time of the electron tunneling through a multiple quantum well structure;Physica B: Condensed Matter;2013-12
5. Triple Quantum Dot Molecule as a Spin-Splitter;Chinese Physics Letters;2009-09
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