Microwave irradiation effects on random telegraph signal in a MOSFET
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference12 articles.
1. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
2. A physical model for random telegraph signal currents in semiconductor devices
3. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
4. Random Telegraph Signal: a local probe for single point defect studies in solid-state devices
5. Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor
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