Induced non-metallicity during resistive switching in structures based on a topological insulator Bi2Se3-Reference-Cited by-同舟云学术

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Induced non-metallicity during resistive switching in structures based on a topological insulator Bi2Se3

Published:2012-10 Issue:45 Volume:376 Page:3398-3401
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Tulina N.A.,Borisenko I.Yu.,Shmytko I.M.,Ionov A.M.,Kolesnikov N.N.,Borisenko D.N.

Funder

Division of Physical Sciences RAS “Physics of Novel Materials and Structures”

Basic Research Program of Presidium RAS “Quantum Mesoscopic and Disordered Structures”

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference61 articles.

1. Who Wins the Nonvolatile Memory Race?

2. The missing memristor found

3. Electrical properties of Au/ and YBa2Cu3O7−x/SrTi1−yNbyO3diodes

4. Electric field and current-induced effects on tunnel spectra of Bi2Sr2CaCu2O8+δ single crystal junctions

5. Modification of YBa2Cu3O7−δ-Au point contact interface properties by applied electric voltage

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1. A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure;Russian Microelectronics;2023-10

2. A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure;Микроэлектроника;2023-09-01

3. Emergence of electric field-induced conducting states in single-crystalline MoTe2 nanoflakes and its application in memristive devices;Applied Surface Science;2023-02

4. Memristive behaviour of electrodeposited bismuth selenide;Journal of Micromechanics and Microengineering;2021-07-29

5. Studying the Dynamic Effects in Memristive Structures Based on Bismuth Selenide: Does a Memristor Need a Shuttle Tail?;Bulletin of the Russian Academy of Sciences: Physics;2019-06

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