Metal–insulator transition induced by fluctuations of the magnetic potential in the quantum well of the semiconductor structure with magnetic impuritiesʼ δ-layer-Reference-Cited by-同舟云学术

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Metal–insulator transition induced by fluctuations of the magnetic potential in the quantum well of the semiconductor structure with magnetic impuritiesʼ δ-layer

Published:2011-10 Issue:42 Volume:375 Page:3731-3738
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Meilikhov E.Z.,Farzetdinova R.M.

Funder

Russian Foundation of Basic Researches

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference21 articles.

1. Electronic Properties of Doped Semiconductors;Shklovsky,1984

2. Indirect exchange in (Ga,Mn)As bilayers via the spin-polarized inhomogeneous hole gas: Monte Carlo simulation

3. Theory of ferromagnetic (III,Mn)V semiconductors

4. Metal–insulator transition induced by fluctuations of the magnetic potential in semiconductors with magnetic impurities

5. Ferromagnetism of semiconducting structures with the indirect interaction of magnetic impurities through a quasi-two-dimensional conduction channel

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectra analysis and O2 evolution for TiO2 photocatalyst compounded with indirect transition semiconductors;Journal of Central South University;2012-09

2. Noise studies of magnetization dynamics in dilute magnetic semiconductor heterostructures;Physical Review B;2012-06-04

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