Structure and properties of deeply n-doped polyacenic semiconductor (PAS)-Reference-Cited by-同舟云学术

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Structure and properties of deeply n-doped polyacenic semiconductor (PAS)

Published:1993-03 Issue:1 Volume:55 Page:388-393
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Yata S.,Kinoshita H.,Komori M.,Ando N.,Kashiwamura T.,Harada T.,Tanaka K.,Yamabe T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. A study on the pristine and the doped polyacenic semiconductive materials

2. S. Yata (Kanebo Ltd.), U.S. Patent No. 4601849 (July 1986).

3. X-ray diffraction studies of pristine and heavily-doped polyacenic materials

4. Studies of porous polyacenic semiconductors toward application I. Preparation and structural analysis

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