Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices-Reference-Cited by-同舟云学术

Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices

Published:1995-12 Issue:3 Volume:75 Page:201-207
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Sharma G.D.,Sangodkar S.G.,Roy M.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. New semiconductor device physics in polymer diodes and transistors

2. Metal-insulator-semiconductor Schottky-type diodes of doped thiophene oligomers

3. Metal-polymer Schottky barriers on processible polymers

4. Organic electroluminescent diodes

5. Efficient light-emitting diodes based on polymers with high electron affinities

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