Characteristics of deeply Li-doped polyacenic semiconductor material and fabrication of a Li secondary battery-Reference-Cited by-同舟云学术

Characteristics of deeply Li-doped polyacenic semiconductor material and fabrication of a Li secondary battery

Published:1995-08 Issue:3 Volume:73 Page:273-277
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Yata Shizukuni,Hato Yukinori,Kinoshita Hajime,Ando Nobuo,Anekawa Akihiro,Hashimoto Takeshi,Yamaguchi Masaki,Tanaka Kazuyoshi,Yamabe Tokio

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. A study on the pristine and the doped polyacenic semiconductive materials

2. S. Yata (Kanebo Ltd.), US Patent No. 4 601 849 (July 1986).

3. X-ray diffraction studies of pristine and heavily-doped polyacenic materials

4. Studies of porous polyacenic semiconductors toward application I. Preparation and structural analysis

5. Polymer battery employing polyacenic semiconductor

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