Electronic structure of the aluminum/polythiophene interface: A joint experimental and theoretical study-Reference-Cited by-同舟云学术

Electronic structure of the aluminum/polythiophene interface: A joint experimental and theoretical study

Published:1991-06 Issue:1-2 Volume:43 Page:3323-3328
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Lazzaroni R.,Brédas J.L.,Dannetun P.,Lögdlund M.,Uvdal K.,Salaneck W.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. New semiconductor device physics in polymer diodes and transistors

2. A field-effect transistor based on conjugated alpha-sexithienyl

3. G. Gustafson, M. Sundberg, O. Inganäs, C. Svensson; J. Molec. Electr., in press.

4. Electronic structure of the alkyl, benzyl and methoxy derivatives of polythiophene

5. Thermochromism in poly(3‐hexylthiophene) in the solid state: A spectroscopic study of temperature‐dependent conformational defects

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