Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation-Reference-Cited by-同舟云学术

Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

Published:2000-05 Issue: Volume:87-89 Page:432-434
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kanemitsu Y,Tanaka H,Kushida T,Min K.S,Atwater H.A

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference12 articles.

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2. Light emission from porous silicon and related materials

3. Optical Properties of Semiconductor Quantum Dots;Woggon,1997

4. Encapsulated semiconductor nanocrystals formed in insulators by ion beam synthesis

5. Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices

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