The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference43 articles.
1. Neutron inelastic scattering;Yarnell,1968
2. Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
3. Intrinsic recombination radiation from GaP
4. Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide
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1. Electronic structure ofZnGeP2:A detailed study of the band structure near the fundamental gap and its associated parameters;Physical Review B;1999-09-15
2. Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy;Journal of Applied Physics;1997-11
3. Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors;Physical Review B;1993-03-15
4. Electrical properties of donors in gallium phosphide;Physica Status Solidi (a);1983-04-16
5. Stress dependence of the sulfur-bound excitons in GaP;Physical Review B;1979-11-15
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