Properties of InGaN/GaN quantum wells and blue light emitting diodes
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference20 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Nitride-based semiconductors for blue and green light-emitting devices
3. Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
4. Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
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1. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03
2. First principles investigation of the structural and electronic properties of (110), (110) and (111) growth axis AlN/GaN superlattices;Chinese Journal of Physics;2017-08
3. Improved Efficiency of GaN-Based Green LED by a Nano-Micro Complex Patterned Sapphire Substrate;IEEE Photonics Technology Letters;2017-06-15
4. Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures;Semiconductor Science and Technology;2015-10-15
5. Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential;Materials Science in Semiconductor Processing;2015-08
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