Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties-Reference-Cited by-同舟云学术

Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties

Published:2020-03 Issue: Volume:174 Page:108014
ISSN:0143-7208
Container-title:Dyes and Pigments
language:en
Short-container-title:Dyes and Pigments

Author:

Yuen Jonathan D.,Pozdin Vladimir A.,Young Ashlyn T.^ORCID,Turner Brendan L.,Giles Ian D.,Naciri Jawad,Trammell Scott A.,Charles Paul T.,Stenger David A.,Daniele Michael A.

Funder

U.S. Naval Research Laboratory

National Science Foundation

Publisher

Elsevier BV

Subject

Process Chemistry and Technology,General Chemical Engineering

Reference49 articles.

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2. General strategy for self-assembly of highly oriented nanocrystalline semiconducting polymers with high mobility;Luo;Nano Lett,2014

3. High-mobility air-stable naphthalene diimide-based copolymer containing extended pi-conjugation for n-channel organic field effect transistors;Kim;Adv Funct Mater,2013

4. Disubstituted perylene diimides in organic field-effect transistors: effect of the alkyl side chains and thermal annealing on the device performance;Kuznetsova;Org Electron,2018

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