Variation in the diode quality factor for metal-insulator-n-semiconductor solar cells-Reference-Cited by-同舟云学术

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Variation in the diode quality factor for metal-insulator-n-semiconductor solar cells

Published:1982-12 Issue:3 Volume:7 Page:219-223
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Sen K.,Srivastava R.S.

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. Photovoltaic properties of MIS-Schottky barriers

2. A comparison of majority- and minority-carrier silicon MIS solar cells

3. Physics of Semiconductor Devices;Sze,1979

4. Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells

5. Model calculations for metal-insulator-semiconductor solar cells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Barrier height, series resistance and diode quality factor for a tin-oxide-doped zinc oxide-silicon junction diode;Semiconductor Science and Technology;1992-02-01

2. Modélisation d'une cellule photovoltaïque I: Détermination des paramètres à partir de la caractéristique courant-tension sous éclairement;Solar Cells;1985-05

3. Change in the diode quality factor with insulator layer thickness in a metal‐insulator‐n‐semiconductor solar cell;Journal of Applied Physics;1985-04-15

4. Variation in the diode quality factor with the insulator layer thickness for a metal‐insulator‐n‐semiconductor solar cell;Journal of Applied Physics;1984-09-15

5. Diode quality factor in polycrystalline solar cells;Journal of Applied Physics;1984-08-15

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