Characteristics of EFG ribbon solar cells fabricated by the ion implantation and pulsed electron beam annealing technique-Reference-Cited by-同舟云学术

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Characteristics of EFG ribbon solar cells fabricated by the ion implantation and pulsed electron beam annealing technique

Published:1984-02 Issue:1 Volume:11 Page:29-39
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Ho C.T.,Moeller G.,Wald F.V.,Spitzer M.B.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Crystals: Growth Properties and Applications;Wald,1981

2. Proc. 2nd Commission of the European Communities Conf. on Photovoltaic Solar Energy;Bell,1979

3. Proc. Symp. on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors;Ladd,1980

4. Proc. 15th Photovoltaic Specialists' Conf.;Landis,1981

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EFG crystal growth technology for low cost terrestrial photovoltaics: review and outlook;Solar Energy Materials;1991-12

2. A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells;Solar Cells;1987-02

3. Progress in Development of Efg Process Control in Silicon Ribbon Production for Photovoltaic Applications;Silicon Processing for Photovoltaics II;1987

4. Influence of high‐temperature annealing on performance of edge‐defined film‐fed growth silicon ribbon solar cells;Applied Physics Letters;1984-09

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