An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAsGaAs solar cells-Reference-Cited by-同舟云学术

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An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAsGaAs solar cells

Published:1990-08 Issue:2-3 Volume:29 Page:173-177
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Woodall J.M.,Hovel H.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Conf. Rec. 11th IEEE Photovoltaic Specialists Conf.;Hovel,1976

2. High‐efficiency Ga1−xAlxAs–GaAs solar cells

3. G. A. Kamath, J. Ewan and R. C. Knechtli, private communication.

4. Interfacial recombination at (AlGa)As/GaAs heterojunction structures

5. Technique for producing ’’good’’ GaAs solar cells using poor-quality substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etchback-regrowth process for solar cell structures;Journal of Crystal Growth;1995-01

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