The absence of the Staebler-Wronski effect in fluorinated amorphous silicon-Reference-Cited by-同舟云学术

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The absence of the Staebler-Wronski effect in fluorinated amorphous silicon

Published:1985-05 Issue:2 Volume:14 Page:191-192
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Janai M.,Stutzmann M.,Weil R.

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. Effects of prolonged illumination on the properties of hydrogenated amorphous silicon

2. Light-induced metastable effects in hydrogenated amorphous silicon

3. M. Janai, R. Weil and B. Pratt, Phys. Rev. B., to be published.

4. Proc. Conf. of Materials Research Society (Europe);Stutzmann,1984

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular ion implantation into silicon;Radiation Effects and Defects in Solids;1990-05

2. Light-Soaking of a-Si:H,F Films Deposited from SiF4 and H2;MRS Proceedings;1989

3. Effusion of deuterium from deuterated‐fluorinated amorphous silicon under illumination;Applied Physics Letters;1988-12-19

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