Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation-Reference-Cited by-同舟云学术

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Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation

Published:1985-11 Issue:3 Volume:15 Page:211-223
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Silard Andrei P.

Publisher

Elsevier BV

Subject

General Engineering

Reference29 articles.

1. A study of the factors which control the efficiency of ion-implanted silicon solar cells

2. Tailored emitter, low-resistivity, ion-implanted silicon solar cells

3. Silicon photovoltaic cells

4. Technical Digest of the International Workshop on the Physics of Semiconductor Devices;Silard,1981

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of design parameters on the efficiency of the solar cells fabricated using SOI structure;Solar Energy Materials and Solar Cells;2003-02

2. Developmental experiments on large‐area silicon solar cells;Journal of Applied Physics;1989-05

3. Analysis of ‘anomalous’ I- V characteristics of silicon p+-n-n+photodiodes fabricated by boron implant through SiO2layers;International Journal of Electronics;1989-02

4. Design/technological experiments on low cost, BSF-type, bifacial solar cells fabricated on large-area silicon wafers;Solar Energy Materials;1988-02

5. Bifacial solar cells on large-area low-cost silicon wafers;IEEE Electron Device Letters;1988-01

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