Novel non-destructive method of measurement of the dead layer thickness of A p+/n (or an n+/p) silicon solar cell-Reference-Cited by-同舟云学术

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Novel non-destructive method of measurement of the dead layer thickness of A p+/n (or an n+/p) silicon solar cell

Published:1985-01 Issue:3 Volume:13 Page:271-275
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Singh S.N.,Arora N.K.,Singh N.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. High‐efficiencyp+‐n‐n+back‐surface‐field silicon solar cells

2. Dopant profile analysis of boron in solar grade poly‐ and single‐ crystalline silicon

3. Proc. 8th Photovoltaic Specialists' Conf.;Shumka,1970

4. Fabrication ofP+‐N‐N+silicon solar cells by simultaneous diffusion of boron and phosphorus into silicon through silicon dioxide

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1. Comparative study of commercial crystalline solar cells;Results in Optics;2023-05

2. Effect of spectral response of solar cells on the module output when individual cells are shaded;Solar Energy;2016-11

3. Magnetic evaluation of a solar panel using HTS-SQUID;Physica C: Superconductivity;2013-11

4. Differential conductivity mapping of solar panels using a high-TC superconductor SQUID;Physica C: Superconductivity and its Applications;2011-11

5. Effect of spatial variation of incident radiation on spectral response of a large area silicon solar cell and the cell parameters determined from it;Solar Energy Materials and Solar Cells;2003-10

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