Preparation of CuInSe2 and CuInS2 films by reactive annealing in H2Se OR H2S
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference6 articles.
1. Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu‐In films to an H2S atmosphere
2. Preparation of thin CuInS2 films via a two-stage process
3. Large Grain Copper Indium Diselenide Films
4. Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2
5. Electroplated CuInS2 and CuInSe2 layers: Preparation and physical and photovoltaic characterization
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1. Electronic and compositional properties of the rear‐side of stoichiometric CuInSe 2 absorbers;Progress in Photovoltaics: Research and Applications;2020-12-07
2. Passivation of the CuInSe2 surface via cadmium pre-electrolyte treatment;Physical Review Materials;2020-04-15
3. Effect of potentials and electric charges for copper and indium depositions to the photocurrent responses of CuInS2 thin films fabricated by stack electrodeposition followed by sulfurization;IOP Conference Series: Materials Science and Engineering;2018-04
4. Influence of heating temperature of Se effusion cell on Cu(In, Ga)Se2 thin films and solar cells;Vacuum;2017-07
5. Adjusting the Ga grading during fast atmospheric processing of Cu(In,Ga)Se2solar cell absorber layers using elemental selenium vapor;Progress in Photovoltaics: Research and Applications;2017-02-08
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