Effect of substrate orientation on the properties of the Si/PbS heterojunction-Reference-Cited by-同舟云学术

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Effect of substrate orientation on the properties of the Si/PbS heterojunction

Published:1980-02 Issue:2 Volume:1 Page:199-208
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Elabd H.,Steckl A.J.,Vidinski W.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Ge‐Epitaxial‐PbS Heterojunctions

2. Electrical properties and spectral response of PbS–Ge heterojunctions

3. Proc. Int. Conf. on Heterojunctions;Guizzetti,1970

4. Electrical and Photovoltaic Properties of PbSSi Heterodiodes

5. Infrared Information Symp., Detector Meeting, 127200-3-X;Steckl,1977

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical solution deposited PbS thin films on Si(100);physica status solidi (c);2008-11

2. EPITAXY and orientation control in chemical solution deposited PbS and PbSe monocrystalline films;Journal of Crystal Growth;2007-06

3. Microstructure and morphology evolution in chemically deposited semiconductor films: 4. From isolated nanoparticles to monocrystalline PbS thin films on GaAs(100) substrates;The European Physical Journal Applied Physics;2006-12-13

4. PbS-Si heterojunctions: Growth and structural properties;Journal of Materials Science;1986-01

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