Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell-Reference-Cited by-同舟云学术

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Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell

Published:2024-05 Issue: Volume:268 Page:112730
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Yamaguchi Noboru^ORCID,Müller Ralph^ORCID,Reichel Christian,Benick Jan,Miyajima Shinsuke

Publisher

Elsevier BV

Reference27 articles.

1. Electrochemically passivated contacts for silicon solar cells;Fischer;IEEE Trans. Electron. Dev.,1971

2. n-Type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation;Richter;Sol. Energy Mater. Sol. Cells,2017

3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics;Feldmann;Sol. Energy Mater. Sol. Cells,2014

4. Passivating contacts and tandem concepts: approaches for the highest silicon-based solar cell efficiencies;Hermle;Appl. Phys. Rev.,2020

5. Highlights of mainstream solar cell efficiencies in 2021;Shen;Front. Energy,2022

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