Extended Cox & Strack analysis for the contact resistance of planar samples with carrier-selective junctions on both sides

Author:

Folchert NilsORCID,Brendel Rolf

Funder

Niedersächsisches Ministerium für Wissenschaft und Kultur

Bundesministerium für Wirtschaft und Energie

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Ohmic contacts for GaAs devices;Cox;Solid State Electron.,1967

2. Theory and experiment on current transfer from alloyed contact to diffused layer;Shockley;Res. Investig. Inverse Ep. UHF Power Transistors-Technical Doc,1964

3. Simulations for the Measurement of Specific Base Contact Resistances with the Transfer Length Method;Eidelloth,2012

4. Polycrystalline Silicon/Monocrystalline Silicon Junctions and Their Application as Passivated Contacts for Si Solar Cells;Römer,2016

5. Survey of dopant-free carrier-selective contacts for silicon solar cells, 2017;Bullock;IEEE 44th Photovolt. Spec. Conf. PVSC,2017

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06

2. Inaccuracies in contact resistivity from the Cox–Strack method: A review;Solar Energy Materials and Solar Cells;2022-10

3. Modelling the annealing of poly-Si/SiOx/c-Si junctions;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022

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