Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling-Reference-Cited by-同舟云学术

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Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling

Published:2016-01 Issue: Volume:144 Page:364-370
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Frisk C.,Ericson T.,Li S.-Y.,Szaniawski P.,Olsson J.,Platzer-Björkman C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Technology Roadmap: Solar Photovoltaic Energy – 2014 edition.

2. Zn(O,S) buffer layers and thickness variations of CdS buffer for Cu2ZnSnS4 solar cells;Ericson;IEEE J. Photovolt.,2014

3. The state and future prospects of kesterite photovoltaics;Polizzotti;Energy Environ. Sci.,2013

4. Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells;Gunawan;Appl. Phys. Lett.,2010

5. Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells;Gokmen;Appl. Phys. Lett.,2014

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2. Sputtering Deposited and Energy Band Matched ZnSnN₂ Buffer Layers for Highly Efficient Cd‐Free Cu₂ZnSnS₄ Solar Cells;Advanced Functional Materials;2024-05-31

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5. Performance assessment of earth-abundant Kesterite and lead-free chalcogenide-based perovskite solar cells using SCAPS-1D;Optik;2023-12

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