Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices

Author:

Repins Ingrid,Glynn Stephen,Bowers Karen,Stevens Bart,Perkins Craig L.,Mansfield Lorelle

Funder

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. 18% efficiency Cd-Free Cu(In,Ga)Se2 thin-film solar cells fabricated using chemical bath deposition (CBD)-ZnS buffer layers;Nakada;Jpn. J. Appl. Phys., Part,2002

2. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo solar cell with 18.6% efficiency;Contreras;Proc. World Conf. Photovolt. Energy Convers.,2003

3. New reaction kinetics for a high-rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2-based solar cells;Hariskos;Prog. Photovolt.,2012

4. Experimental investigation of Cu(In1-x,Gax)Se2/Zn(O1-z,Sz) solar cell performance;Hultqvist;Sol. Energy Mater. Sol. Cells,2011

5. Improved efficiency of Cu(In,Ga)Se2 thin film solar cells with chemically deposited ZnS buffer layers by air-annealing-formation of homojunction by solid phase diffusion;Nakada,2000

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