Photoelectrical characterization of a new generation diode having GaFeO3 interlayer-Reference-Cited by-同舟云学术

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Photoelectrical characterization of a new generation diode having GaFeO3 interlayer

Published:2014-05 Issue: Volume:124 Page:180-185
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Soylu Murat,Cavas M.,Al-Ghamdi Ahmed A.,Gafer Z.H.,El-Tantawy F.,Yakuphanoglu Fahrettin

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. First principles study of the electric polarization and of its switching in the multiferroic GaFeO3 system;Stoeffler;J. Phys. Condens. Matter,2012

2. Magnetoelectric effect and toroidal ordering in Ga2−xFexO3;Popov;J. Exp. Theor. Phys.,1998

3. Solid state chemistry of Fe–Ga mixed oxides;Amores;J. Mater. Chem.,2001

4. IR study of the active sites formed by H2 treatment of Ga/HZSM-5 catalysts;Kanazirev;J. Mol. Catal.,1991

5. Enhancement in propane aromatization with Ga2O3/HZSM-5 catalysts;Kanazirev;J. Chem. Soc., Chem. Commun.,1990

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