P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Published:2017-02 Issue: Volume:160 Page:355-360
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Valdueza-Felip S.,Ajay A.,Redaelli L.,Chauvat M.P.,Ruterana P.,Cremel T.,Jiménez-Rodríguez M.,Kheng K.,Monroy E.

Funder

IEF

French National Research Agency

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. InGaN Solar Cells: present state of the art and important challenges;Bhuiyan;IEEE J. Photovolt.,2012

2. Modeling of InGaN/Si tandem solar cells;Hsu;J. Appl. Phys.,2008

3. InGaN photocell significant efficiency enhancement on Si – an influence of interlayer physical properties;Ghosh;Int. J. Energy Res.,2016

4. Electrical properties of InGaN-Si heterojunctions;Ager;Physica Status Solidi C,2009

5. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell;Li;Physica B: Condens. Matter,2013

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling;Results in Engineering;2024-03

2. Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range;Micromachines;2022-10-26

3. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures;Microelectronics International;2021-07-08

4. Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-06-16

5. Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN;Optical Materials;2021-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3