Determining factor of MoSe2 formation in Cu(In,Ga)Se2 solar Cells

Author:

Zhu Xiaolong,Zhou Zhen,Wang Yaoming,Zhang Lei,Li Aimin,Huang Fuqiang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Chemical and structural characterization of Cu(In,Ga)Se2/Mo interface in Cu(In,Ga)Se2 solar cells;Wada;Japanese Journal of Applied Physics,1996

2. MoSe2 layer formation at Cu(In,Ga)Se2/Mo interfaces in high efficiency Cu (In1−xGax)Se2 solar cells;Nishiwaki;Japanese Journal of Applied Physics,1998

3. MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films;Pouzet;Revue de Physique Appliquee,1990

4. Effects of selenization conditions on densification of Cu(In,Ga)Se2 (CIGS) thin films prepared by spray deposition of CIGS nanoparticles;Ahn;Journal of Applied Physics,2009

5. Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells;Wüz;Thin Solid Films,2003

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