Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique

Author:

Wang Zhixue,Liu Zunke,Liao Mingdun,Huang Dandan,Guo Xueqi,Rui Zhe,Yang Qing,Guo Wei,Sheng Jiang,Shou Chunhui,Yan Baojie,Yuan Zhizhong,Zeng Yuheng,Ye Jichun

Funder

National Key R&D Program of China

Zhejiang Energy Group

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation

Key Research and Development Program of Zhejiang Province

Ningbo “Innovation 2025” Major Project

Key Project of Zhejiang Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%;Feldmann,2013

2. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics;Feldmann;Sol. Energy Mater. Sol. Cells,2014

3. Tunnel oxide passivated contacts as an alternative to partial rear contacts;Feldmann;Sol. Energy Mater. Sol. Cells,2014

4. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions;Römer;Sol. Energy Mater. Sol. Cells,2014

5. Implementation of N+ and P+ polo junctions on front and rear side of double-side contacted industrial silicon solar cells;Peibst,2016

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