Mid-infrared reflectance and transmittance characterization of phosphorus and boron diffused silicon solar wafers-Reference-Cited by-同舟云学术

Mid-infrared reflectance and transmittance characterization of phosphorus and boron diffused silicon solar wafers

Published:2020-02 Issue: Volume:205 Page:110286
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Ananthanarayanan Divya,Wong Johnson,Balaji Nagarajan,Aberle Armin G.,Ho Jian Wei

Funder

National University of Singapore

Singapore's National Research Foundation

Singapore Economic Development Board

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

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3. Non-destructive measurement of surface concentrations and junction depths of diffused semiconductor layers;Abe;Jpn. J. Appl. Phys.,1968

4. Analysis of the emitter saturation current density of industrial type silver screen-printed front contacts;Hannebauer;27th Eur. Photovolt. Sol. Energy Conf. Exhib.,2012

5. Infrared reflectivity and transmissivity of boron-implanted, laser annealed silicon;Engstrom;J. Appl. Phys.,1980

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