Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique-Reference-Cited by-同舟云学术

Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique

Published:2011-04 Issue:2 Volume:32 Page:96-99
ISSN:0141-9382
Container-title:Displays
language:en
Short-container-title:Displays

Author:

Kao Chien-Chih,Su Yan-Kuin,Lin Chuing-Liang,Chen Jian-Jhong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Human-Computer Interaction

Reference16 articles.

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4. Defect structure in selectively grown GaN films with low threading dislocation density;Sakai;Appl. Phys. Lett.,1997

5. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode;Yamada;Jpn. J. Appl. Phys.,2002

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