A Brief Overview of SiC MOSFET Failure Modes and Design Reliability
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference18 articles.
1. Yuan Zhang, Yung C. Liang, 2014. Over-Current Protection Scheme for SiC Power MOSFET DC Circuit Breaker, IEEE.
2. Ueda, T., 2014. Reliability issues in GaN and SiC power devices, IEEE International Reliability Physics Symposium Proceedings 2014, pp. 3D.4.1-3D.4.6.
3. Santini, T., Sebastien, M., Florent, M., Phung, L., and Allard, B., 2013. Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications, 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 2013, pp. 385-391.
4. Dasgupta, S., Kaplar, R.J., Marinella, M.J., Smith, M.A. and Atcitty, S., 2012. Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs, IEEE International Reliability Physics Symposium Proceedings 2012, pp. 3D.3.1-3D.3.5.
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