An a-Si:H/SiGe/Si punchthrough heterojunction phototransistors with an thin-Al film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. High Photo-to-Dark-Current Ratio in SiGe/Si Schottky-Barrier Photodetectors by Using an a-Si:H Cap Layer
2. Improving the Performance of SiGe Metal–Semiconductor–Metal Photodetectors by Using an Amorphous Silicon Passivation Layer
3. Suppressing the dark current of metal–semiconductor–metal SiGe/Si heterojunction photodetector by using asymmetric structure
4. Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors
5. Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface morphology and optical properties of magnetron – sputtered ultrathin Al films;Vacuum;2010-02
2. Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe;Electrochemical and Solid-State Letters;2010
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