Depth dependent tetragonal distortion of a GaN epilayer with an AlN interlayer on Si(111) studied by Rutherford backscattering/channeling
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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4. Stress and defect control in GaN using low temperature interlayers;Amano;Jpn. J. Appl. Phys.,1998
5. Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer;Iwaya;Appl. Surf. Sci.,2000
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