Effects of phosphorus implantation and subsequent growth on diamond-Reference-Cited by-同舟云学术

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Effects of phosphorus implantation and subsequent growth on diamond

Published:2004-09 Issue: Volume:462-463 Page:24-28
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cho Euo Sik,Lee Cheon An,Baek Gwanghyeon,Uh Hyung Soo,Kwon Sang Jik,Shin Hyungcheol,Park Byung-Gook,Lee Jong Duk

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Negative-electron-affinity effects on the diamond (100) surface

3. Defect‐enhanced electron field emission from chemical vapor deposited diamond

4. Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

5. Field emission characteristics of diamond films with different surface morphologies

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of hydrogen flow rate on the growth and field electron emission characteristics of diamond thin films synthesized through graphite etching;Diamond and Related Materials;2007-08

2. Field electron emission characteristics of diamond films with different grain morphologies;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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