Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device-Reference-Cited by-同舟云学术

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Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device

Published:2013-01 Issue: Volume:528 Page:26-30
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yang Jyun-Bao,Chang Ting-Chang,Huang Jheng-Jie,Chen Yu-Ting,Yang Po-Chun,Tseng Hsueh-Chih,Chu Ann-Kuo,Sze Simon M.,Tsai Ming-Jinn

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Developments in nanocrystal memory

2. Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

3. Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

4. Direct injection tunnel spectroscopy of a p-n junction

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films;physica status solidi (a);2020-10-14

2. Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal;Coatings;2020-05-24

3. Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation;Journal of Nanoscience and Nanotechnology;2020-05-01

4. Review of Ga2O3-based optoelectronic devices;Materials Today Physics;2019-12

5. Ultra-wide bandgap semiconductor of β-Ga₂O₃ and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector;Acta Physica Sinica;2019

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