Top-down integration of suspended N+/P/N+ silicon-nanowire-based ion-sensitive field effect transistors for pH analysis at the submicronic scale-Reference-Cited by-同舟云学术

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Top-down integration of suspended N+/P/N+ silicon-nanowire-based ion-sensitive field effect transistors for pH analysis at the submicronic scale

Published:2023-01 Issue: Volume:764 Page:139609
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lale A.^ORCID,Grappin A.,Lecestre A.^ORCID,Mazenq L.^ORCID,Launay J.^ORCID,Temple-Boyer Pierre

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference58 articles.

1. S.M. Sze, "Physics of semiconductors devices", 2nd edition, John Wiley & Sons Inc., Canada (1981).

2. FET-type gas sensors: a review;Hong;Sens. Actuators,2021

3. Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years;Bergveld;Sens. Actuators,2003

4. Bio-chem-FETs: field effect transistors for biological sensing, Biological identification;Chaniotakis,2014

5. VLSI technology;Sze,1983

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor;Journal of Nano Research;2023-12-22

2. Recent Advances and Prospects in Silicon Nanowire Sensors: A Critical Review;Silicon;2023-10-21

3. Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection;Sensors;2023-06-07

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