Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth-Reference-Cited by-同舟云学术

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Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth

Published:2008-11 Issue:1 Volume:517 Page:101-104
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Collaert N.,Rooyackers R.,Hikavyy A.,Dixit A.,Leys F.,Verheyen P.,Loo R.,Jurczak M.,Biesemans S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs

2. Extension and source/drain design for high-performance finFET devices

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